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IEC 60749-23 Ed. 1.1 Edition 03/2011
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
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Abstract

IEC 60749-23:2004+A1:2011 is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard. This consolidated version consists of the first edition (2004) and its amendment 1 (2011). Therefore, no need to order amendment in addition to this publication.

Status

Standard - Superseded

Origin

Technical Committee :
47 : Semiconductor devices

Implementation

start of the vote on the project      date of ratification (dor)   
end of the vote on the project      date of anouncement (doa)   
start of the vote on the final project      date of publication (dop)   
end of the vote on the final project      date of withdrawal (dow)   


Publication Official Journal
of the Grand-Duchy of Luxembourg
Reference

Relations

Evolutions
IEC 60951-3 Ed.3.0 RLV

International Classification for Standards (ICS codes) :

31.080.01 : Semiconductor devices in general

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