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IEC 60747-9 Ed. 2.0 Edition 09/2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
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  • 304.6 / copy
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Abstract

This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.

Status

Standard - Active

Origin

Technical Committee :
47E : Discrete semiconductor devices

Implementation

start of the vote on the project      date of ratification (dor)   
end of the vote on the project      date of anouncement (doa)   
start of the vote on the final project      date of publication (dop)   
end of the vote on the final project      date of withdrawal (dow)   


Publication Official Journal
of the Grand-Duchy of Luxembourg
Reference

Relations

Evolutions
IEC 60951-3 Ed.3.0 RLV
IEC 60747-9 Ed.3.0

Relations to older standards
IEC 60747-9 Ed. 1.0

International Classification for Standards (ICS codes) :

31.080.01 : Semiconductor devices in general
31.080.30 : Transistors

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